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Spin Transfer Technologies produced working 60-nm STT-MRAM prototypes

Spin Transfer Technologies (STT) has successfully produced a working prototype STT-MRAM device.

SpinTransfertTechnology
Technological survey

Spin Transfer Technologies (STT) has successfully produced a working prototype STT-MRAM device. The company's advanced prototyping magnetics processing line at its facility in Fremont, California, is now fully operational.

STT's prototypes incorporate proprietary, performance-enhancing ‘spin-filtering’ technology, and were fabricated on industry standard CMOS wafers sourced from a high volume Asian foundry supplier. The prototypes are based on 60-nm perpendicular magnetic tunnel junction devices

Back in February STT announced that they raised $36 million to accelerate the development of its patented orthogonal spin transfer magneto resistive random access memory technology (OST-MRAM) - by scaling operation, hiring new employees and purchasing equipment. Back in October 2008 we have interviewed Vincent Chun, who was then the executive in charge at STT.

Source: www.mram-info.com

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